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| CM600DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM F-Series Module 600 Amperes/250 Volts A TC Measured Point D T - (4 TYP.) H G2 F BE R CM C2E1 25 C L E2 25 C1 E2 J E1 G1 XH S - NUTS (3 TYP) Q Q P N G V - THICK x W - WIDE TAB (4 PLACES) K K K M C LABEL F G2 E2 C2E1 E2 C1 E1 G1 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.15 Millimeters 110.0 80.0 Dimensions M N P Q R S T V W X Inches 0.33 0.10 0.85 0.98 0.86 M6 0.26 Dia. 0.02 0.110 1.08 Millimeters 8.5 2.5 21.6 25.0 21.75 M6 6.5 Dia. 0.5 2.79 27.35 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 2.440.01 0.83 0.16 0.24 0.59 0.55 93.00.25 62.00.25 21.0 4.0 6.0 15.0 14.0 Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DU-5F is a 250V (VCES), 600 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODTM F-Series Module 600 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC IC(rms) ICM IE IE(rms) IEM Pc - - - CM600DU-5F -40 to 150 -40 to 125 250 20 600 350 1200* 600 350 1200* 1100 40 40 580 Units C C Volts Volts Amperes Amperes (rms) Amperes Amperes Amperes (rms) Amperes Watts in-lb in-lb Grams Volts Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 10V, Tj = 25C IC = 600A, VGE = 10V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 100V, IC = 600A, VGE = 10V IE = 600A, VGE = 0V Min. - - 3.0 - - - - Typ. - - 4.0 1.2 1.1 2200 - Max. 1 0.5 5.0 1.7 - - 2.0 Units mA A Volts Volts Volts nC Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Symbol Cies Coes Cres td(on) tr td(off) tf trr VCC = 100V, IC = 600A, VGE1 = VGE2 = 10V, RG = 4.2 , Inductive Load Switching Operation VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 20.0 Max. 170 11 5.7 850 600 1100 500 300 - Units nf nf nf ns ns ns ns ns C Qrr IE = 600A **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODTM F-Series Module 600 Amperes/250 Volts Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Per IGBT 1/2 Module TC Reference Point Under Chip Min. - - - - Typ. - - 0.020 - Max. 0.11 0.20 - 0.05 Units C/W C/W C/W C/W OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 VGE = 15V COLLECTOR CURRENT, IC, (AMPERES) 1200 6.5 6.25 Tj = 25oC 6 COLLECTOR CURRENT, IC, (AMPERES) 2.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 10 900 8 VCE = 10V Tj = 25C Tj = 125C 900 1.6 VGE = 15V Tj = 25C Tj = 125C 1.2 600 5.75 600 0.8 5.5 300 5.25 5 300 0.4 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 400 800 1200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 Tj = 25C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES) 104 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 103 102 Cies 6 4 IC = 1200A IC = 240A IC = 600A 102 101 Coes VGE = 0V f = 1MHz Cres 2 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-5F Dual IGBTMODTM F-Series Module 600 Amperes/250 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -600A/sec Tj = 25C trr Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) REVERSE RECOVERY TIME, trr, (ns) 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(on) tf SWITCHING TIME, (ns) IC = 600A 16 VCC = 50V 12 8 102 tr 102 VCC = 100V VGE = 10V RG = 4.2 Tj = 25C Inductive Load 102 VCC = 100V VCC = 100V VGE = 10V RG = 4.2 Tj = 125C Inductive Load 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 1 10 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 1500 3000 4500 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.20C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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